050-5986 rev a 5-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 38.5a) zero gate voltage drain current (v ds = 500v, v gs = 0v) zero gate voltage drain current (v ds = 400v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 500 0.060 25 250 100 24 apt50m60l2vr 500 77 308 3040 833 6.67 -55 to 150 300 7750 3200 apt50m60l2vr 500v 77a 0.060 ?? ?? ? g d s power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. to-264 max package avalanche energy rated faster switching lower leakage to-264 max power mos v ? mosfet downloaded from: http:///
dynamic characteristics apt50m60l2vr 050-5986 rev a 5-2004 symbol r jc r ja min typ max 0.15 40 unitc/w characteristicjunction to case junction to ambient symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 250v i d = 77a @ 25c resistive switching v gs = 15v v dd = 250v i d = 77a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 333v, v gs = 15v i d = 77a, r g = 5 ? inductive switching @ 125c v dd = 333v, v gs = 15v i d = 77a, r g = 5 ? min typ max 10600 1800 795560 70 285 2025 80 8 15103450 2065 3830 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.160.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.5 0.1 0.3 0.7 0.9 0.05 characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d 77a ) reverse recovery time (i s = -i d 77a , dl s /dt = 100a/s) reverse recovery charge (i s = -i d 77a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 77 308 1.3 680 17 8 symbol i s i sm v sd t rr q rr dv / dt 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 1.08mh, r g = 25 ? , peak i l = 77a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 77a di / dt 700a/s v r 500v t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. downloaded from: http:///
050-5986 rev a 5-2004 typical performance curves apt50m60l2vr r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 6.5v 7.5v 5.5v 7v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 6v 0 5 10 15 20 25 30 0123456 02 04 06 08 01 0 01 2 01 4 01 6 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 140120 100 8060 40 20 0 8070 60 50 40 30 20 10 0 2.52.0 1.5 1.0 0.5 0.0 i d = 38.5a v gs = 10v 200180 160 140 120 100 8060 40 20 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 8v v gs =10v v gs =20v normalized to v gs = 10v @ 38.5a 0.05450.0957 0.0487f0.922f power (watts) rc model junctiontemp. ( c) case temperature. ( c) v gs =15 & 10v downloaded from: http:///
apt50m60l2vr 050-5986 rev a 5-2004 c rss c iss c oss v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 500 0 10 20 30 40 50 0 100 200 300 400 500 600 700 800 0.3 0.5 0.7 0.9 1.1 1.3 1.5 308100 5010 51 1612 84 0 t c =+25c t j =+150c single pulse 10ms 1ms 100s t j =+150c t j =+25c v ds = 250v v ds = 100v v ds = 400v i d = 77a 20,00010,000 1,000 100200 100 10 1 operation here limited by r ds (on) i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 333v r g = 5 ? t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 0 5 10 15 20 25 30 35 40 45 50 v dd = 333v i d = 77a t j = 125c l = 100h e on includes diode reverse recovery. t d(on) t d(off) e on e off 700600 500 400 300 200 100 0 7,0006,000 5,000 4,000 3,000 2,000 1,000 0 v dd = 333v r g = 5 ? t j = 125c l = 100h v dd = 333v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. 250200 150 100 50 0 25,00020,000 15,000 10,000 5,000 0 downloaded from: http:///
050-5986 rev a 5-2004 typical performance curves apt50m60l2vr figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions switching energy drain current drain voltage gate voltage t j 125c 10% 0 t d(off) 90% t f 90% drain current drain voltage gate voltage t j 125c 10% t d(on) 90% 5% t r 5% 10% switching energy i c d.u.t. apt60df60 v ce fi g ure 20 , inductive switchin g test circuit v dd g to-264 max tm (l2) package outline 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030)1.30 (.051) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. downloaded from: http:///
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